MF1P2131DA4SLASH02 datasheet(3/33 Pages) NXP

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NXP Semiconductors

MF1P(H)x1y1

MIFARE Plus EV1

MF1P(H)x1y1

All information provided in this document is subject to legal disclaimers.

Product short data sheet

Rev. 3.2 — 6 December 2018

COMPANY PUBLIC

366932

3 / 33

4 Quick reference data

Remark: all values are target values only and subject to change until final product

release.

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

input capacitance

MF1P1y1

Tamb = 25°C; fi = 13.56 MHz;

1.5V RMS

16.15

17.85

input capacitance

MF1PHx1y1

Tamb = 25°C; fi = 13.56 MHz;

1.5V RMS

66.5

73.5

input frequency

13.56

MHz

EEPROM characteristics

tret

retention time

Tamb = 22 °C

year

Nendu(W)

write endurance

Tamb = 22 °C; excluding anti-tearing

for AES keys or sector trailers in SL 3

200000

500000

cycle

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