D5V0P4URL6SO

Document number: DS38234 Rev. 1 - 2

2 of 5

www.diodes.com

May 2016

© Diodes Incorporated

D5V0P4URL6SO

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current, per IEC 61000-4-5

20

A

Peak Pulse Power, per IEC 61000-4-5

180

W

ESD Protection

– Contact Discharge, per IEC 61000-4-2

30

kV

ESD Protection

– Air Discharge, per IEC 61000-4-2

30

kV

Operating Temperature

-55 to +85

°C

—

Storage Temperature

-55 to +150

°C

—

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation Typical (Note 5)

300

mW

Thermal Resistance, Junction to Ambient Typical (Note 5)

417

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

—

—

3.3

V

Reverse Current (Note 6)

—

—

1

μA



Reverse Breakdown Voltage

4.5

—

8.0

V

Forward Clamping Voltage

—

0.8

1.2

V

Reverse Clamping Voltage (Note7)

—

6

—

V

ESD Clamping Voltage

—

7.5

—

V

Dynamic Reverse Resistance

—

0.15

—

Ω

Channel Input Capacitance

—

2.4

55

3

pF

—

0.04

—

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. website at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.