NXP Semiconductors

BGS8L5

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8L5

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Product data sheet

Rev. 1 — 2 March 2018

10 / 15

13 Application information

13.1 LTE LNA

aaa-006409

6

L1

2

1

4

3

C1

5

IC1

For a list of components, see Table 10. Both ground pins must be connected on PCB.

Figure 3.  Schematics LTE LNA evaluation board

Table 10. List of components

For schematics, see Figure 3

Component

Description

Value

Remarks

decoupling capacitor

1 μF

node must be at least 1 μF. It must

be positioned at a short distance

within 15 mm). Typically, such

capacitance is already present

regulator.

IC1

BGS8L5

NXP

15 nH

617 < f < 652 MHz Murata

LQW15A

L1

high-quality matching

inductor

8.7 nH

703 < f < 960 MHz Murata

LQW15A