NXP Semiconductors

BGS8L5

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8L5

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© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 1 — 2 March 2018

7 / 15

Symbol

Parameter

Conditions

Min

Typ

Max Unit

f = 637 MHz

-

23

-

dB

f = 740 MHz

-

23

-

dB

f = 882 MHz

-

23

-

dB

ISL

isolation

f = 943 MHz

-

23

-

dB

K

Rollett stability factor

1

-

-

turn-on time

the gain

-

-

4

µs

turn-off time

the gain

-

-

1

µs

Bypass Mode

supply current

-

-

1.0

µA

f = 637 MHz

-

−2.0 -

dB

f = 740 MHz

-

−2.0 -

dB

f = 882 MHz

-

−2.2 -

dB

power gain

f = 943 MHz

-

−2.5 -

dB

f = 637 MHz

-

11

-

dB

f = 740 MHz

-

13

-

dB

f = 882 MHz

-

10

-

dB

input return loss

f = 943 MHz

-

9

-

dB

f = 637 MHz

-

7

-

dB

f = 740 MHz

-

9

-

dB

f = 882 MHz

-

8

-

dB

output return loss

f = 943 MHz

-

7

-

dB

[1]

PCB losses are subtracted.