NXP Semiconductors

BGS8L5

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8L5

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Product data sheet

Rev. 1 — 2 March 2018

6 / 15

12 Characteristics

Table 8. Characteristics

component values as in Table 10. Unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Gain Mode

supply current

-

4.7

6.0

mA

f = 637 MHz

-

15.5

-

dB

f = 740 MHz

-

14.5

-

dB

f = 882 MHz

-

13.5

-

dB

power gain

f = 943 MHz

-

13.0

-

dB

ΔG/ΔT

gain variation with temperature

-

−0.01 -

dB/°C

f = 637 MHz

[1] -

0.8

-

dB

f = 740 MHz

[1] -

0.8

-

dB

f = 882 MHz

[1] -

0.8

-

dB

NF

noise figure

f = 943 MHz

[1] -

0.85

-

dB

f = 637 MHz

-

−10

-

dBm

f = 740 MHz

-

−9

-

dBm

f = 882 MHz

-

−8

-

dBm

input power at 1 dB gain compression

f = 943 MHz

-

−7

-

dBm

f = 637 MHz, Δf = 1 MHz

-

−3

-

dBm

f = 740 MHz, Δf = 1 MHz

-

−2

-

dBm

f = 882 MHz, Δf = 1 MHz

-

−1

-

dBm

input third-order intercept point

f = 943 MHz, Δf = 1 MHz

-

0

-

dBm

f = 637 MHz

-

14

-

dB

f = 740 MHz

-

10

-

dB

f = 882 MHz

-

15

-

dB

input return loss

f = 943 MHz

-

16

-

dB

f = 637 MHz

-

9

-

dB

f = 740 MHz

-

10

-

dB

f = 882 MHz

-

9

-

dB

output return loss

f = 943 MHz

-

9

-

dB