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EM351-RTR Fiches technique(PDF) 8 Page - Silicon Laboratories |
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EM351-RTR Fiches technique(HTML) 8 Page - Silicon Laboratories |
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8 / 241 page ![]() Rev 1.3 8 2. Electrical Specifications 2.1. Absolute Maximum Ratings Table 2.1 lists the absolute maximum ratings for the EM35x. 2.2. Recommended Operating Conditions Table 2.2 lists the rated operating conditions of the EM35x. Table 2.1. Absolute Maximum Ratings Parameter Test Condition Min Max Unit Regulator input voltage (VDD_PADS) –0.3 +3.6 V Analog, Memory and Core voltage (VDD_24MHZ, VDD_VCO, VDD_RF, VDD_IF, VDD_PADSA, VDD_MEM, VDD_PRE, VDD_SYNTH, VDD_CORE) –0.3 +2.0 V Voltage on RF_P,N; RF_TX_ALT_P,N –0.3 +3.6 V RF Input Power (for max level for correct packet reception see Table 2.7) RX signal into a lossless balun — +15 dBm Voltage on any GPIO (PA[7:0], PB[7:0], PC[7:0]), SWCLK, nRESET, VREG_OUT –0.3 VDD_PAD S +0.3 V Voltage on any GPIO pin (PA4, PA5, PB5, PB6, PB7, PC1), when used as an input to the general purpose ADC –0.3 2.0 V Voltage on OSCA, OSCB, NC –0.3 VDD_PAD SA +0.3 V Storage temperature –40 +140 °C Note: Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Table 2.2. Operating Conditions Parameter Test Condition Min Typ Max Unit Regulator input voltage (VDD_PADS) 2.1 — 3.6 V Analog and memory input voltage (VDD_24MHZ, VDD_VCO, VDD_RF, VDD_IF, VDD_PADSA, VDD_MEM, VDD_PRE, VDD_SYNTH) 1.7 1.8 1.9 V Core input voltage when supplied from internal regulator (VDD_CORE) 1.18 1.25 1.32 V Core input voltage when supplied externally (VDD_CORE) 1.18 — 1.9 V Operating temperature range, TA –40 — +85 °C Note: Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. |
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