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DS17885 Fiches technique(PDF) 30 Page - Dallas Semiconductor |
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DS17885 Fiches technique(HTML) 30 Page - Dallas Semiconductor |
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30 / 38 page ![]() DS17885/DS17887 30 of 38 POWER-UP/POWER-DOWN TIMING, 5V (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CS High to Power-Fail tPF 0ns Recovery at Power-Up tREC 150 ms VCC Slew Rate Power-Down tF 4.0 £ VCC £ 4.5V 300 ms VCC Slew Rate Power-Down tFB 3.0 £ VCC £ 4.0V 10 ms VCC Slew Rate Power-Up tR 4.5 ³ VCC ³ 4.0V 0 ms Expected Data Retention tDR 10 years 9, 10 POWER-UP/POWER-DOWN TIMING, 3V (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CS High to Power-Fail tPF 0ns Recovery at Power-Up tREC 150 ms VCC Slew Rate Power-Down tF 2.5 £ VCC £ 3.0V 300 ms VCC Slew Rate Power-Up tR 3.0 ³ VCC ³ 2.5V 0 ms Expected Data Retention tDR 10 years 9, 10 Warning: Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery back-up mode. CAPACITANCE (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance CIN 12 pF Output Capacitance COUT 12 pF WAKE-UP/KICKSTART TIMING (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Kickstart-Input Pulse-Width tKSPW 2 ms Wake-up/Kickstart Power-On Timeout tPOTO 2s 7 |
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