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DS17885 Fiches technique(PDF) 26 Page - Dallas Semiconductor |
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DS17885 Fiches technique(HTML) 26 Page - Dallas Semiconductor |
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26 / 38 page ![]() DS17885/DS17887 26 of 38 DC ELECTRICAL CHARACTERISTICS Over the operating range (3V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Average VCC Power-Supply Current ICC1 15 30 mA 1, 2 CMOS Standby Current ( CS = VCC - 0.2V) ICC2 0.5 2 mA 1, 2 Input Leakage Current (Any Input) IIL -1 +1 mA Output Leakage Current IOL -1 +1 mA 5 Output Logic 1 Voltage at -0.4mA VOH 2.4 V Output Logic 0 Voltage at +0.8mA VOL 0.4 V Power-Fail Trip Point VPF 2.5 2.6 2.7 V 3 Battery Leakage OSC ON IBAT1 0.50 0.7 mA 11 Battery Leakage OSC OFF IBAT2 0.050 0.4 mA 11 I/O Leakage ILO -1 +1 mA 4 PWR Output at 0.4V IOLPWR 4mA IRQ Output at 0.4V IOLIRQ 0.8 mA CRYSTAL SPECIFICATIONS* PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Nominal Frequency FO 32.768 kHz Series Resistance ESR 45 kΩ Load Capacitance CL 6 or 12.5 pF *The crystal, traces, and crystal input pins should be isolated from RF generating signals. Refer to Application Note 58, “Crystal Considerations for Dallas Real-Time Clocks” for additional specification. |
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