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IRF640N Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce IRF640N
Description  N-Channel MOSFET Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF640N Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRF640N
DESCRIPTION
·
Drain Current –ID= 18A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 200V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max)
·
Fast Switching Speed
·
Low Drive Requirement
APPLICATIONS
·
Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous@ TC=25℃
18
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62
℃
/W


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