Fabricant | No de pièce | Fiches technique | Description |
 International Rectifier |
IRF640N
|
155Kb/11P
|
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
|
 Fairchild Semiconductor |
IRF640N
|
160Kb/11P
|
N-Channel Power MOSFETs 200V, 18A, 0.15ohm
|
 International Rectifier |
IRF640N
|
240Kb/11P
|
HEXFET Power MOSFET
|
IRF640N
|
248Kb/12P
|
Advanced Process Technology
|
 Inchange Semiconductor ... |
IRF640N
|
201Kb/2P
|
N-Channel MOSFET Transistor
|
IRF640N
|
338Kb/2P
|
N-Channel MOSFET Transistor
|
IRF640NL
|
288Kb/2P
|
Isc N-Channel MOSFET Transistor
|
 International Rectifier |
IRF640NL
|
155Kb/11P
|
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
|
 Fairchild Semiconductor |
IRF640NL
|
160Kb/11P
|
N-Channel Power MOSFETs 200V, 18A, 0.15ohm
|
 International Rectifier |
IRF640NL
|
240Kb/11P
|
HEXFET Power MOSFET
|
IRF640NL
|
248Kb/12P
|
Advanced Process Technology
|
 Kersemi Electronic Co.,... |
IRF640NL
|
1Mb/11P
|
Advanced Process Technology
|
 International Rectifier |
IRF640NLPBF
|
300Kb/12P
|
HEXFET짰 Power MOSFET
|
IRF640NLPBF
|
341Kb/11P
|
Advanced Process Technology
|
 Kersemi Electronic Co.,... |
IRF640NLPBF
|
8Mb/11P
|
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature
|
 International Rectifier |
IRF640NLPBF
|
341Kb/11P
|
Advanced Process Technology
|
IRF640NPBF
|
300Kb/12P
|
HEXFET짰 Power MOSFET
|
IRF640NPBF
|
341Kb/11P
|
Advanced Process Technology
|
 Kersemi Electronic Co.,... |
IRF640NPBF
|
8Mb/11P
|
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature
|
 International Rectifier |
IRF640NPBF
|
341Kb/11P
|
Advanced Process Technology
|