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IRF640N Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce IRF640N
Description  N-Channel MOSFET Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF640N Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
IRF640N
·
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-stage Resistance
VGS=10V; ID= 11A
0.15
Ω
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
25
uA
VSD
Diode Forward Voltage
IF= 11A; VGS=0
1.3
V


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