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LP8900TLE-AAEC/NOPB Fiches technique(PDF) 11 Page - Texas Instruments

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No de pièce LP8900TLE-AAEC/NOPB
Description  LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits
PDF  23 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

LP8900TLE-AAEC/NOPB Fiches technique(HTML) 11 Page - Texas Instruments

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LP8900
IN
GND
VIN
VEN 1
VOUT 1
1 PF
VOUT 2
VEN 2
EN1
EN2
OUT2
OUT1
CIN
COUT 1
COUT 2
1 PF
1 PF
11
LP8900
www.ti.com
SNVS542E – MAY 2008 – REVISED JUNE 2016
Product Folder Links: LP8900
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LP8900 is designed to meet the requirements of RF and analog circuits, providing low device noise, high
PSRR, low quiescent current, and superior line transient response. The device offers class-leading device noise
performance without a noise bypass capacitor and is stable with input and output capacitors with a value of 1 µF.
The LP8900 delivers this performance in an industry standard DSBGA package which, for this device, is
specified with an operating junction temperature (TJ) of –40°C to +125°C.
9.2 Typical Application
Figure 11. LP8900 Typical Application



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