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L9779WD Fiches technique(PDF) 75 Page - STMicroelectronics |
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L9779WD Fiches technique(HTML) 75 Page - STMicroelectronics |
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75 / 170 page ![]() DocID027452 Rev 5 75/170 L9779WD Functional description 169 6.12.1 External MOSFET gate pre-drivers diagnosis Each channel locally detects and writes its own fault or no-fault condition (codified on 2 bit according to the Table 28: Fault encoding condition). Short circuit to battery or overcurrent for all the outputs during ON condition. Open load or short to GND during OFF condition. The faults are latched and reset at every Read Diag operation. In “off” conditions the first fault detected is latched and can be overwritten only by the ON condition fault. Channel “on” Short to Vb: Current diagnosis is the result of a comparison between Drain pin voltage and the internal Vshort threshold selected by MSC. If: Vdrain> Vshort for t > TSHORT the driver is switched off and the fault is set, latched and reset at every Read Diag operation. When the fault occurs the driver is switched off with a controlled slew-rate. The drivers switches on AGAIN in the following conditions: – If command goes LOW and than HIGH again – If command remains active driver is switched automatically on at every Read Diag operation. Short to GND: Not available. Open load: Not available. DRAIN8_9, OUT8_9 Tshort Short to VB fault filter time. Programmable from 1.3 µs to 170 µs, Test by scan --25% 1.3 +25% µs 2.6 5.2 (defaul t) 10 21 42 84 170 1. 0.172 for OUT8. Table 30. External MOSFET gate pre-drivers (continued) Pin Symbol Parameter Test condition Min Typ Max Uni t |
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