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D44H11FP Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce D44H11FP
Description  Complementary power transistors
PDF  9 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

D44H11FP Fiches technique(HTML) 3 Page - STMicroelectronics

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D44H11FP, D45H11FP
Electrical characteristics
Doc ID 16096 Rev 3
3/9
2
Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Note:
For PNP types voltage and current values are negative.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage (IB = 0)
IC = 30 mA
80
-
V
ICES
Collector cut-off current
(VBE = 0)
VCE = 80 V
-
10
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
-
50
µA
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 8 A
IB = 0.4 A
-
1
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 8 A
IB = 0.8 A
-
1.5
V
hFE
(1)
DC current gain
IC = 2 A_
VCE = 1 V
60
-
IC = 4 A_ _
VCE = 1 V
40
-



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