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TC664 Fiches technique(PDF) 27 Page - Microchip Technology |
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TC664 Fiches technique(HTML) 27 Page - Microchip Technology |
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27 / 36 page ![]() 2002 Microchip Technology Inc. DS21737A-page 27 TC664/TC665 Figure 7-10 shows the voltage pulse at the Sense pin, which is caused by the fan's "extra" current pulse during PWM output turn-on. FIGURE 7-10: Extra Pulse at Sense Pin. This problem occurs mainly with fans that have a cur- rent waveshape like the one shown in Figure 7-9. For configurations where an NPN transistor is being used as the external drive device, the typical Rsense and CSENSE scheme can continue to be used to sense the fan current pulses. In order to eliminate the extra cur- rent pulse, a slow down capacitor can be placed from the base of the transistor to ground. A 0.1 µF capacitor is appropriate in most cases. This arrangement is shown in Figure 7-11. This capacitor will help to slow down the turn-on edge of the transistor and reduce the amplitude of the extra current pulse. For configurations using an N-channel MOSFET as the drive device, the slow down capacitor does not fix all conditions and the current sensing scheme must be changed. Since the current for this type of fan always returns to zero, the coupling capacitor, CSENSE, is not needed. Instead, it will be replaced by an R-C configu- ration to eliminate the voltage pulse generated by the extra current pulse. This new sensing configuration is shown in Figure 7-12. The values of the resistor/capac- itor combination should be adjusted so that the voltage pulse generated by the extra current pulse is smoothed and is not registered by the TC664/TC665 as a true fan current pulse. Typical values for RSLOW and CSLOW are 1 k Ω and 1000 pF, respectively. FIGURE 7-11: Transistor Drive with CSLOW Capacitor. FIGURE 7-12: FET Drive with RSLOW/ CSLOW Sense Scheme. Sense Pin Voltage "Extra Pulse" VOUT PWM CSLOW (0.1 µF SENSE VOUT FAN RISO RSENSE CSENSE TC664 TC665 GND (0.1 µF typical) typical) CSLOW (1000 pF SENSE VOUT FAN RSLOW RSENSE TC664 TC665 GND typical) (1 k Ω typical) |
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