NX6352GP_15 datasheet(1/7 Pages) RENESAS

No de pièce	NX6352GP

Description	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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R08DS0088EJ0100 Rev.1.00

Page 1 of 5

Feb 25, 2013

Preliminary Data Sheet

NX6352GP Series

LASER DIODE

1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION

DESCRIPTION

The NX6352GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple

Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser

diode with InGaAs monitor PIN-PD.

APPLICATIONS

• 9.8 Gbps CPRI

• 10G E-PON ONU

FEATURES

• Optical output power

PO = 8.5 mW

• Low threshold current

Ith = 7 mA

• Differential efficiency

ηd = 0.35 W/A

• Wide operating temperature range

TC =

−40 to +85°C

• InGaAs monitor PIN-PD

• CAN package

φ 5.6 mm

• Focal point

7.5 mm

R08DS0088EJ0100

Rev.1.00

Feb 25, 2013

Numéro de pièce similaire - NX6352GP_15

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	NX6352GP31	853Kb / 7P	LASER DIODE Feb 25, 2013
California Eastern Labs	NX6352GP31-AZ	1Mb / 6P	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

More results

Description similaire - NX6352GP_15

Fabricant	No de pièce	Fiches technique	Description
California Eastern Labs	NX6353EP	714Kb / 6P	1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
	NX6350GP	903Kb / 6P	1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
	NX6352GP	1Mb / 6P	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
	NX6351GP	938Kb / 6P	1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
	NX6350EP	1,013Kb / 6P	LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
Renesas Technology Corp	NX6314EH	205Kb / 7P	LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
	NX6350EP	138Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
	NX6350GP	129Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
	NX6351GP	266Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
	NX6353EP	247Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

More results

NX6352GP Fiches technique(PDF) 1 Page - Renesas Technology Corp

NX6352GP Fiches technique(HTML) 1 Page - Renesas Technology Corp

Numéro de pièce similaire - NX6352GP_15

Description similaire - NX6352GP_15

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