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NX6350GP Fiches technique (PDF) - California Eastern Labs
NX6350GP Datasheet PDF - California Eastern Labs
No de pièce NX6350GP
Télécharger  NX6350GP Télécharger
Taille du fichier   903.68 Kbytes
Page   6 Pages
Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs
Description 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE

NX6350GP Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
NX6350GP Datasheet PDF - California Eastern Labs

No de pièce NX6350GP
Télécharger  NX6350GP Click to download

Taille du fichier   903.68 Kbytes
Page   6 Pages
Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs
Description 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE

NX6350GP Fiches technique (HTML) - California Eastern Labs




Numéro de pièce similaire - NX6350GP

FabricantNo de pièceFiches techniqueDescription
logo
Renesas Technology Corp		 NX6350GP RENESAS-NX6350GP Datasheet
694Kb / 7P		 LASER DIODE
Jul 05, 2012
NX6350GP27 RENESAS-NX6350GP27 Datasheet
694Kb / 7P		 LASER DIODE
Jul 05, 2012
NX6350GP29 RENESAS-NX6350GP29 Datasheet
694Kb / 7P		 LASER DIODE
Jul 05, 2012
NX6350GP31 RENESAS-NX6350GP31 Datasheet
694Kb / 7P		 LASER DIODE
Jul 05, 2012
NX6350GP33 RENESAS-NX6350GP33 Datasheet
694Kb / 7P		 LASER DIODE
Jul 05, 2012
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Description similaire - NX6350GP

FabricantNo de pièceFiches techniqueDescription
logo
California Eastern Labs		 NX6353EP CEL-NX6353EP Datasheet
714Kb / 6P		 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
NX6352GP CEL-NX6352GP Datasheet
1Mb / 6P		 LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
NX6351GP CEL-NX6351GP Datasheet
938Kb / 6P		 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
NX6350EP CEL-NX6350EP Datasheet
1,013Kb / 6P		 LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
logo
Renesas Technology Corp		 NX6314EH RENESAS-NX6314EH_15 Datasheet
205Kb / 7P		 LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
NX6350EP RENESAS-NX6350EP_15 Datasheet
138Kb / 7P		 LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
NX6350GP RENESAS-NX6350GP_15 Datasheet
129Kb / 7P		 LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
NX6351GP RENESAS-NX6351GP_15 Datasheet
266Kb / 7P		 LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
NX6352GP RENESAS-NX6352GP_15 Datasheet
286Kb / 7P		 LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
NX6353EP RENESAS-NX6353EP_15 Datasheet
247Kb / 7P		 LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
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À propos de California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.




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