NX6352GP_15 datasheet(4/7 Pages) RENESAS

4 / 7 page

NX6352GP Series

Chapter Title

R08DS0088EJ0100 Rev.1.00

Page 4 of 5

Feb 25, 2013

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C, unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Optical Output Power

Forward Current of LD

120

Reverse Voltage of LD

2.0

Forward Current of PD

10.0

Reverse Voltage of PD

Operating Case Temperature

−40 to +85

°C

Storage Temperature

Tstg

−40 to +95

°C

Lead Soldering Temperature

Tsld

350 (3 sec.)

°C

Relative Humidity (noncondensing)

RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

TC = 25

°C

−

Bias Current

Ibias

TC = 85

°C

−

ELECTRO-OPTICAL CHARACTERISTICS

(TC =

−40 to +85°C, CW, BOL, unless otherwise specified)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Signaling Rate

−

9.8304

−

Gb/s

Optical Output Power

−

8.5

−

Operating Voltage

Vop

PO = 8.5 mW

−

2.0

Threshold Current

Ith

TC = 25

°C

−

Differential Efficiency

ηd

PO = 8.5 mW, TC = 25

°C

0.23

−

W/A

PO = 8.5 mW

0.13

−

NX6352GP27

1 260

−

1 280

NX6352GP29

1 280

−

1 300

NX6352GP31

1 300

−

1 320

NX6352GP33

1 320

−

1 340

Peak Emission Wavelength

λp

PO = 8.5 mW

NX6352GP35

1 340

1 360

Side Mode Suppression Ratio

SMSR

PO = 8.5 mW

−

Rise Time

20-80% ∗

−

Fall Time

80-20% ∗

−

Monitor Current

VR = 1.5 V, PO = 8.5 mW

100

−

1 000

μA

Monitor Dark Current

VR = 3.3 V, TC = 25

°C

−

VR = 3.3 V

−

100

Monitor PD Terminal

Capacitance

VR = 3.3 V, f = 1 MHz

−

Note: 1.

9.8304 Gb/s, PRBS 2

31 −1, NRZ, Duty Cycle = 50%

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