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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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STM8S103F2U6TR Fiches technique(PDF) 66 Page - STMicroelectronics |
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STM8S103F2U6TR Fiches technique(HTML) 66 Page - STMicroelectronics |
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66 / 113 page  Unit Max Typ Min Conditions Parameter Symbol % 1.0 (3) User-trimmed with CLK_HSITRIMR register for Accuracy of HSI oscillator ACCHSI given VDD and TA conditions (1) 1.0 -1.0 VDD = 5 V, TA = 25°C (2) Accuracy of HSI oscillator (factory 2.0 -2.0 VDD = 5 V, 25 °C ≤ TA ≤ 85 °C calibrated) 3.0 (2) -3.0 (2) 2.95 ≤ VDD≤ 5.5 V,-40 °C ≤ TA ≤ 125 °C μs 1.0 (3) HSI oscillator wakeup time tsu(HSI) including calibration μA 250 (2) 170 HSI oscillator power IDD(HSI) consumption (1) Refer to application note. (2) Data based on characterization results, not tested in production. (3) Guaranteed by design, not tested in production. Figure 19: Typical HSI accuracy at VDD = 5 V vs 5 temperatures DocID15441 Rev 6 66/113 STM8S103K3 STM8S103F3 STM8S103F2 Electrical characteristics |
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