MPC8315CVRADDA datasheet(18/106 Pages) FREESCALE

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MPC8315E PowerQUICC II Pro Processor Hardware Specifications, Rev. 2

Freescale Semiconductor

DDR and DDR2 SDRAM

This table provides the PLL lock times.

DDR and DDR2 SDRAM

This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the

MPC8315E. Note that DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V.

7.1 DDR and DDR2 SDRAM DC Electrical Characteristics

This table provides the recommended operating conditions for the DDR2 SDRAM component(s) of the

MPC8315E when GVDD(typ) = 1.8 V.

Note:

1. tPCI_SYNC_IN is the clock period of the input clock applied to PCI_SYNC_IN. When the device is In PCI host mode the primary

clock is applied to the SYS_CLK_IN input, and PCI_SYNC_IN period depends on the value of CFG_SYS_CLKIN_DIV.

2. tSYS_CLK_IN is the clock period of the input clock applied to SYS_CLK_IN. It is only valid when the device is in PCI host mode.

3. POR configuration signals consists of CFG_RESET_SOURCE[0:3] and CFG_SYS_CLKIN_DIV.

4. The parameter names CFG_SYS_CLKIN_DIV and CFG_CLKIN_DIV are used interchangeably in this document.

Table 10. PLL Lock Times

Parameter/Condition

Min

Max

Unit

Note

System PLL lock times

—

100

s—

e300 core PLL lock times

—

100

s—

SerDes (SGMII/PCI Exp Phy) PLL lock times

—

100

s—

USB phy PLL lock times

—

100

s—

SATA phy PLL lock times

—

100

s—

Table 11. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V

Parameter/Condition

Symbol

Min

Max

Unit

Note

I/O supply voltage

GVDD

1.7

1.9

I/O reference voltage

MVREF

0.49

 GVDD

0.51

 GVDD

I/O termination voltage

VTT

MVREF – 0.04

MVREF + 0.04

Input high voltage

VIH

MVREF+ 0.125

GVDD + 0.3

—

Input low voltage

VIL

–0.3

MVREF – 0.125

—

Output leakage current

IOZ

–9.9

9.9

A4

Output high current (VOUT = 1.420 V,

GVDD= 1.7V)

IOH

–13.4

—

Output low current (VOUT = 0.280 V)

IOL

13.4

—

Table 9. RESET Initialization Timing Specifications (continued)

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