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ECMF02-4CMX8 Fiches technique(PDF) 2 Page - STMicroelectronics |
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ECMF02-4CMX8 Fiches technique(HTML) 2 Page - STMicroelectronics |
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2 / 16 page ![]() Characteristics ECMF02-4CMX8 2/16 Doc ID 022286 Rev 1 1 Characteristics Figure 2. Electrical characteristics - definitions Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Peak pulse voltage(1) ESD discharge IEC 61000-4-2, level 4 Contact discharge on D+/D- pins Contact discharge on VBUS and ID pins Air discharge on all pins 10 20 30 kV PPP Peak pulse power (8/20µs) on VBUS 150 W IPP Peak pulse current (8/20µs) on VBUS 4.8 A Top Operating temperature -30 to +85 °C Tj Maximum junction temperature 125 °C Tstg Storage temperature range - 55 to +150 °C 1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353. I V I PP I PP V CL V CL V BR V BR V RM V RM I R I R I RM I RM I RM I RM I R I R I PP I PP V RM V RM V BR V BR V CL V CL Symbol Parameter V = Breakdown voltage I = Leakage current @ V V = Stand-off voltage V = Clamping voltage I = Peak pulse current I = Breakdown current BR RM RM RM CL PP R |
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