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KB8821 Fiches technique(PDF) 9 Page - Samsung semiconductor

No de pièce KB8821
Description  FREQUENCY SYNTHESIZER
PDF  21 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KB8821 Fiches technique(HTML) 9 Page - Samsung semiconductor

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PRELIMINARY SPECIFICATION (V1.5)
FREQUENCY SYNTHESIZER
KB8821/22/23
9
99-06-15
ELECTRICAL CHARACTERISTICS(V
DD=3.0V, VP=3.0V, -40
οC≤T
a≤85
οC Unless otherwise specified)- Continued
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Serial Data Control
CLOCK Frequency
fCLOCK
10
MHz
CLOCK Pulse Width High
tCWH
50
ns
CLOCK Pulse Width Low
tCWL
50
ns
DATA Set Up Time to CLOCK
Risng Edge
tDS
50
ns
DATA Hold Time after CLOCK
Rising Edge
tDH
10
ns
LE Pulse Width
tLEW
50
ns
CLOCK Rising Edge to LE Rising
Edge
tCLE
50
ns
<For Charge Pump items>
Ia=Charge pump sink current at Vcp=Vp-∆V,
Ib=Charge pump sink current at Vcp=Vp/2,
Ic=Charge pump sink current at Vcp=∆V
Id=Charge pump source current at Vcp=Vp-∆V, Ie=Charge pump source current at Vcp=Vp/2, If=Charge pump source current at Vcp=∆V
∆V=Voltage offset from positive(for sink current) and negative(for source current) points from which the charge pump currents bec
ome flat.
* Output Current Sink vs. Source Mismatch = [| Ib|-|Ie|] / [0.5 * {| Ib|+|Ie|}] * 100 (%)
** Output Current Magnitude Variation vs. Temperature =
[| Ib @any temp.| - |Ib @ 25
οC|] / | I
b @ 25
οC| * 100 (%) and [|I
e @any temp.| - |Ie @ 25
οC|] / |I
e @ 25
οC| * 100 (%)
*** Output Current Magnitude Variation vs. Voltage =
[0.5 * {|Ia|-|Ic|}] / [0.5 * {|Ia|+|Ic|}] * 100 (%) and [0.5 * {|Id|-|If|}] / [0.5 * {|Id|+|If|}] * 100 (%)



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