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LPC1114FA44/301 Fiches technique(PDF) 30 Page - NXP Semiconductors |
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LPC1114FA44/301 Fiches technique(HTML) 30 Page - NXP Semiconductors |
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30 / 59 page ![]() LPC1111_12_13_14_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 16 April 2010 30 of 59 NXP Semiconductors LPC1111/12/13/14 32-bit ARM Cortex-M0 microcontroller 9. Static characteristics Table 7. Static characteristics Tamb = −40 °C to +85 °C, unless otherwise specified. Symbol Parameter Conditions Min Typ[1] Max Unit VDD supply voltage (core and external rail) 1.8 3.3 3.6 V IDD supply current Active mode; code while(1){} executed from flash system clock = 12 MHz VDD = 3.3 V [2][3][4] [5][6] -3 -mA system clock = 50 MHz VDD = 3.3 V [2][3][5] [6][7] -9 -mA Sleep mode; system clock = 12 MHz VDD = 3.3 V [2][3][4] [5][6] -2 -mA Deep-sleep mode; VDD = 3.3 V [2][3][8] -6 - μA Deep power-down mode; VDD = 3.3 V [2][9] -220 -nA Standard port pins, RESET IIL LOW-level input current VI = 0 V; on-chip pull-up resistor disabled - 0.5 10 nA IIH HIGH-level input current VI =VDD; on-chip pull-down resistor disabled - 0.5 10 nA IOZ OFF-state output current VO =0V; VO =VDD; on-chip pull-up/down resistors disabled - 0.5 10 nA VI input voltage pin configured to provide a digital function [10][11] [12] 0- 5.0 V VO output voltage output active 0 - VDD V VIH HIGH-level input voltage 0.7VDD --V VIL LOW-level input voltage - - 0.3VDD V Vhys hysteresis voltage - 0.4 - V VOH HIGH-level output voltage 2.0 V ≤ V DD ≤ 3.6 V; IOH = −4 mA [13] VDD − 0.4 --V 1.8 V ≤ V DD < 2.0 V; IOH = −3 mA [13] VDD − 0.4 --V VOL LOW-level output voltage 2.0 V ≤ V DD ≤ 3.6 V; IOL =4 mA [13] --0.4 V 1.8 V ≤ V DD < 2.0 V; IOL =3 mA [13] --0.4 V |
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