EM68932DVKB datasheet(18/40 Pages) ETRON

No de pièce	EM68932DVKB

Description	4M x 32 Mobile DDR Synchronous DRAM (SDRAM)

PDF	40 Pages

Scroll/Zoom	100%

Fabricant	ETRON [Etron Technology, Inc.]

Site Internet	http://www.etron.com

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18 / 40 page

EtronTech

EM68932DVKB

Etron Confidential

Rev. 1.0

Aug. 2009

Table 16. Recommended A.C. Operating Conditions (VDD=1.7V~1.95V, TA =-25~85°C)

Parameter

Symbol

Min.

Max.

Unit Note

Input High Voltage (AC)

VIH (AC)

0.8 x VDDQ

VDDQ+0.3

Input Low Voltage (AC)

VIL (AC)

-0.3

0.2 x VDDQ

Input Crossing Point Voltage, CK and CK inputs VIX (AC)

0.4 x VDDQ

0.6 x VDDQ

Note:

1. These parameters should be tested at the pin on actual components and may be checked at either the pin

or the pad in simulation.

2. The value of VIX is expected to equal 0.5 x VDDQ of the transmitting device and must track variation in the DC

level of the same.

Table 17. LVCMOS Interface

Reference Level of Output Signals

0.5 x VDDQ

Output Load

Reference to the Test Load

Input Signal Levels (VIH/ VIL)

0.8 x VDDQ / 0.2 x VDDQ

Input Signals Slew Rate

1 V/ns

Reference Level of Input Signals

0.5 x VDDQ

Figure 4. LVCMOS A.C. Test Load

Output

Z0=50Ω

50Ω

20pF

0.5 x VDDQ

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