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STM32F412RGU6PTR Fiches technique(PDF) 98 Page - STMicroelectronics

No de pièce STM32F412RGU6PTR
Description  Arm®-Cortex®-M4 32b MCUFPU, 125 DMIPS, 1MB Flash, 256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces
PDF  201 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F412RGU6PTR Fiches technique(HTML) 98 Page - STMicroelectronics

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Electrical characteristics
STM32F412xE/G
98/201
DocID028087 Rev 7
Table 34. Typical and maximum current consumption in Standby mode - VDD= 3.6 V
Symbol
Parameter
Conditions
Typ(1)
Max(2)
Unit
TA =
25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
TA =
125 °C
IDD_STBY
Supply current in
Standby mode
Low-speed oscillator (LSE in low drive
mode) and RTC ON
3.7
5.4
17.2
31.2
62.3
µA
Low-speed oscillator (LSE in high drive
mode) and RTC ON
4.5
6.2
18.0
32.0
63.2
RTC and LSE OFF
2.6
4.0
16.0
30.0
61.0(3)
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Guaranteed by characterization, not tested in production unless otherwise specified.
3. Tested in production.
Table 35. Typical and maximum current consumptions in VBAT mode
Symbol Parameter
Conditions(1)
Typ
Max(2)
Unit
TA = 25 °C
TA =
85 °C
TA =
105 °C
TA =
125 °C
VBAT =
1.7 V
VBAT=
2.4 V
VBAT =
3.3 V
VBAT =
3.6 V
VBAT = 3.6 V
IDD_VBAT
Backup
domain
supply
current
Low-speed oscillator (LSE in
low-drive mode) and RTC ON
0.74
0.87
1.04
1.11
3.0
5.0
10.0
µA
Low-speed oscillator (LSE in
high-drive mode) and RTC ON
1.52
1.70
1.97
2.09
3.8
5.8
11.6
RTC and LSE OFF
0.04
0.04
0.05
0.05
2.0
4.0
8.0
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization, not tested in production.



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