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S29GL01GS10DFIV13 Fiches technique(PDF) 85 Page - Cypress Semiconductor

No de pièce S29GL01GS10DFIV13
Description  1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
PDF  108 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S29GL01GS10DFIV13 Fiches technique(HTML) 85 Page - Cypress Semiconductor

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Document Number: 001-98285 Rev. *R
Page 85 of 108
S29GL01GS/S29GL512S
S29GL256S/S29GL128S
Figure 11.13 Read to Write (CE# Toggle) Operation Timing Diagram
Notes:
1. Not 100% tested.
2. Upon the rising edge of WE#, must wait tSR/W before switching to another address.
3. See Table 5.4 on page 43 and Table 5.5 on page 44 for specific values.
Table 11.8 Erase/Program Operations
Parameter
Description
VIO = 2.7 V
to VCC
VIO = 1.65 V
to VCC
Unit
JEDEC
Std
tWHWH1
tWHWH1
Write Buffer Program Operation
Typ
(Note 3)
µs
Effective Write Buffer Program Operation per Word
Typ
(Note 3)
µs
Program Operation per Word or Page
Typ
(Note 3)
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)
Typ
(Note 3)
ms
tBUSY
Erase/Program Valid to RY/BY# Delay
Max
80
ns
tSR/W
Latency between Read and Write operations (Note 2)
Min
10
ns
tESL
Erase Suspend Latency
Max
(Note 3)
µs
tPSL
Program Suspend Latency
Max
(Note 3)
µs
tRB
RY/BY# Recovery Time
Min
0
µs
Amax-A0
CE#
OE#
WE#
DQ15-DQ0
tACC
tOE
tCE
tAS
tCS
tDS
tAH
tDH
tWP
tCH
tOH
tOH
tOH
tDF
tDF
tGHWL



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