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MCP4021 Fiches technique(PDF) 8 Page - Microchip Technology |
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MCP4021 Fiches technique(HTML) 8 Page - Microchip Technology |
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8 / 64 page ![]() MCP4021/2/3/4 DS21945E-page 8 © 2006 Microchip Technology Inc. FIGURE 1-3: High-Voltage Increment Timing Waveform. CS U/D tHCUR tLO tHI tHUC W tCSHI tS 1/fUD tCSLO tS tHCUF tHUC tHCUF 5V 12V SERIAL TIMING CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply across the specified operating ranges. Extended (E): VDD = +2.7V to 5.5V, TA = -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions CS Low Time tCSLO 5— — µs CS High Time tCSHI 500 — — ns U/D High Time tHI 500 — — ns U/D Low Time tLO 500 — — ns Up/Down Toggle Frequency fUD —— 1 MHz HV U/D to CS Hold Time tHUC 1.5 — — µs HV CS to U/D Low Setup Time tHCUF 8— — µs HV CS to U/D High Setup Time tHCUR 4.5 — — µs Wiper Settling Time tS 0.5 — — µs 2.1 k Ω, CL = 100 pF 1— — µs 5 k Ω, CL = 100 pF 2— — µs 10 k Ω, CL = 100 pF 10 5 — µs 50 k Ω, CL = 100 pF Wiper Response on Power-up tPU —200 — ns Internal EEPROM Write Time twc — — 5 ms @25°C — — 10 ms -40°C to +125°C |
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