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PHN708 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce PHN708
Description  7 N-channel 80 mohm FET array enhancement mode MOS transistors
PDF  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHN708 Fiches technique(HTML) 2 Page - NXP Semiconductors

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1998 Mar 17
2
Philips Semiconductors
Product specification
7 N-channel 80 m
Ω FET array
enhancement mode MOS transistors
PHN708
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-state resistance.
APPLICATIONS
• Driving high performance three phase brushless
DC motors.
DESCRIPTION
Seven enhancement mode MOS transistors in a 24-pin
plastic SOT340-1 (SSOP24) package. Six of the
transistors are in three half-bridge configurations.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT340-1 (SSOP24)
PIN
SYMBOL
DESCRIPTION
1 and 4
d1
drain 1
2s1
source 1
3g1
gate 1
5 and 8
d2
drain 2
6s2
source 2
7g2
gate 2
9 and 12
d3
drain 3
10
s3
source 3
11
g3
gate 3
13
g4
gate 4
14
s4
source 4
15, 17, 18, 20,
21, 23, 24
d4
drain 4
16
g5
gate 5
19
g6
gate 6
22
g7
gate 7
Fig.1 Simplified outline and symbol.
handbook, full pagewidth
112
24
13
MAM275
s4
d4
g1
s1
g4
g7
g2
s2
g6
g3
s3
g5
d1
d2
d3



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