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PHN708 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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PHN708 Fiches technique(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1998 Mar 17 2 Philips Semiconductors Product specification 7 N-channel 80 m Ω FET array enhancement mode MOS transistors PHN708 FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Driving high performance three phase brushless DC motors. DESCRIPTION Seven enhancement mode MOS transistors in a 24-pin plastic SOT340-1 (SSOP24) package. Six of the transistors are in three half-bridge configurations. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING - SOT340-1 (SSOP24) PIN SYMBOL DESCRIPTION 1 and 4 d1 drain 1 2s1 source 1 3g1 gate 1 5 and 8 d2 drain 2 6s2 source 2 7g2 gate 2 9 and 12 d3 drain 3 10 s3 source 3 11 g3 gate 3 13 g4 gate 4 14 s4 source 4 15, 17, 18, 20, 21, 23, 24 d4 drain 4 16 g5 gate 5 19 g6 gate 6 22 g7 gate 7 Fig.1 Simplified outline and symbol. handbook, full pagewidth 112 24 13 MAM275 s4 d4 g1 s1 g4 g7 g2 s2 g6 g3 s3 g5 d1 d2 d3 |
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