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PHN708 Fiches technique(PDF) 7 Page - NXP Semiconductors

No de pièce PHN708
Description  7 N-channel 80 mohm FET array enhancement mode MOS transistors
PDF  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHN708 Fiches technique(HTML) 7 Page - NXP Semiconductors

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1998 Mar 17
7
Philips Semiconductors
Product specification
7 N-channel 80 m
Ω FET array
enhancement mode MOS transistors
PHN708
Fig.6
Gate-source voltage as a function of total
gate charge; typical values.
VDD = 15 V; ID = 1 A; Tamb =25 °C.
handbook, halfpage
02
QG (nC)
VGS
(V)
46
10
0
8
6
4
2
MDA792
Fig.7
Output characteristics; typical values.
Tamb =25 °C; tp =80 µs; δ =0.
(1) VGS =10V.
(2) VGS = 7.5 V.
(3) VGS =6V.
(4) VGS =5V.
(5) VGS = 4.5 V.
(6) VGS =4V.
(7) VGS = 3.5 V.
(8) VGS =3V.
(9) VGS = 2.5 V.
handbook, halfpage
0
(4)
(5)
(6)
12
16
8
4
0
24
10
8
6
MDA790
ID
(A)
VDS (V)
(8)
(9)
(1) (2) (3)
(7)
Fig.8 Transfer characteristic; typical values.
VDS = 10 V; Tamb =25 °C; tp =80 µs; δ =0.
handbook, halfpage
02
ID
(A)
VGS (V)
46
16
12
4
0
8
MDA791
Fig.9
Capacitance as a function of drain-source
voltage; typical values.
VGS = 0 ; f = 1 MHz; Tj =25 °C.
handbook, halfpage
0
300
400
200
100
0
510
25
20
15
MDA789
C
(pF)
VDS (V)
Crss
Ciss
Coss



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