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PHN708 Fiches technique(PDF) 8 Page - NXP Semiconductors

No de pièce PHN708
Description  7 N-channel 80 mohm FET array enhancement mode MOS transistors
PDF  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHN708 Fiches technique(HTML) 8 Page - NXP Semiconductors

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1998 Mar 17
8
Philips Semiconductors
Product specification
7 N-channel 80 m
Ω FET array
enhancement mode MOS transistors
PHN708
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
tp = 300 µs; δ =0.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = −65 °C.
handbook, halfpage
0
(1)
(2)
(3)
0.4
IS
(A)
VSD (V)
0.8
1.2
8
6
2
0
4
MDA793
Fig.11 Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tamb =25 °C; tp = 300 µs; δ =0.
(1) ID = 0.3 A.
(2) ID = 0.75 A.
(3) ID = 1.5 A.
(4) ID = 3.1 A.
(5) ID =5A.
(6) ID = 7.5 A.
(7) ID =10A.
(8) ID = 12.4 A.
handbook, halfpage
10
0
24
VGS (V)
RDSon
(
Ω)
68
10
1
10−1
10−2
MDA794
(1)(2)
(4)(5)(6)(7)
(3)
(8)



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