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M25PE10, M25PE20

Read Data Bytes at Higher Speed

(FAST_READ)

The device is first selected by driving Chip Select

(S) Low. The instruction code for the Read Data

Bytes at Higher Speed (FAST_READ) instruction

is followed by a 3-Byte address (A23-A0) and a

dummy Byte, each bit being latched-in during the

rising edge of Serial Clock (C). Then the memory

contents, at that address, is shifted out on Serial

Data Output (Q), each bit being shifted out, at a

Serial Clock (C).

The instruction sequence is shown in Figure 13.

The first Byte addressed can be at any location.

The address is automatically incremented to the

next higher address after each Byte of data is shift-

ed out. The whole memory can, therefore, be read

with a single Read Data Bytes at Higher Speed

(FAST_READ) instruction. When the highest ad-

dress is reached, the address counter rolls over to

000000h, allowing the read sequence to be contin-

ued indefinitely.

The

Read

Data

Bytes

at

Higher

Speed

(FAST_READ) instruction is terminated by driving

Chip Select (S) High. Chip Select (S) can be driv-

en High at any time during data output. Any Read

Data Bytes at Higher Speed (FAST_READ) in-

struction, while an Erase, Program or Write cycle

is in progress, is rejected without having any ef-

fects on the cycle that is in progress.

Figure 13. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence

and Data-Out Sequence

Note: Address bits A23 to A18 are Don’t Care in the M25PE20. Address bits A23 to A17 are Don’t Care in the M25PE10.

C

D

AI04006

S

Q

23

2

1

3456789 10

28 29 30 31

22 21

3210

High Impedance

Instruction

24 BIT ADDRESS

0

C

D

S

Q

32 33 34

36 37 38 39 40 41 42 43 44 45 46

765432

0

1

DATA OUT 1

Dummy Byte

MSB

7

6543210

DATA OUT 2

MSB

MSB

7

47

765432

0

1

35