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STM32L010R8 Fiches technique(PDF) 45 Page - STMicroelectronics |
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STM32L010R8 Fiches technique(HTML) 45 Page - STMicroelectronics |
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45 / 92 page ![]() DS12325 Rev 3 45/92 STM32L010K8 STM32L010R8 Electrical characteristics 82 Figure 9. IDD vs VDD, Run mode, code running from Flash memory, Range 2, HSI, 1 ws Table 20. Current consumption in Run mode vs code type, code with data processing running from Flash memory Symbol Parameter Conditions fHCLK Typ Unit IDD (Run from Flash memory) Supply current in Run mode, code executed from Flash memory fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL ON)(1) Range 3, VCORE =1.2 V, VOS[1:0] = 11 Dhrystone 4 MHz 555 µA CoreMark 585 Fibonacci 440 while(1) 355 while(1), prefetch OFF 353 Range 1, VCORE = 1.8 V VOS[1:0] = 01 Dhrystone 32 MHz 6.3 mA CoreMark 6.3 Fibonacci 6.55 while(1) 5.4 while(1), prefetch OFF 5.2 1. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). MSv48127V1 |
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