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ZSSC3123AI2R Fiches technique(PDF) 10 Page - Renesas Technology Corp |
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ZSSC3123AI2R Fiches technique(HTML) 10 Page - Renesas Technology Corp |
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10 / 62 page ![]() ZSSC3123 Datasheet Nov 19, 2021 Page 10 © 2021 Renesas Electronics 5. Electrical Characteristics Table 4. Electrical Characteristics Symbol Parameter Conditions Minimum Typical Maximum Units Supply Current IDD Update Mode Current (varies with part configuration) [a] Best case settings: [b] Mult 1, 8-bit, 125ms Power Down 60 100 μA Worst case settings: Mult 1, 14-bit, 0ms Power Down 750 1100 IPDM Extra Current with PDM enabled [b] 150 μA ISLEEP Sleep Mode Current [a] -40 to 85°C 0.6 1 μA -40 to 125°C 1 3 μA Voltage Levels VPOR Power-On-Reset Level 1.6 1.7 2.2 V VREG Active Regulated Voltage Note: Regulated voltage can be measured on the Vcore pin. 2.4 2.55 2.7 V Capacitance-to-Digital Converter (CDC) RESCDC Resolution 8 14 Bits fMULT1 Excitation Frequency of External Capacitances C0 and C1 (for a system frequency fSYS) Mult 1 fSYS/2 kHz fMULT2 Mult 2 fSYS/4 kHz fMULT4 Mult 4 fSYS/8 kHz fMULT8 Mult 8 fSYS/16 kHz INLCDC Integral Nonlinearity (INL) [c] Mult 1, 10% to 90% input, 14-bit 0.2 % DNLCDC Differential Nonlinearity (DNL) [b] Mult 1, 10% to 90% input, 14-bit 0.9 LSB EEPROM nWRI_EEP Number of Erase/Write Cycles At 85 C 100k tWRI_EEP Data Retention At 100 C 10 Year Temperature Conversion RESTEMP Resolution in °C [b] -40 to 125°C, 8-bit mode 0.64 0.96 1.6 °C -40 to 125°C, 14-bit mode 0.01 0.015 0.025 INLCDC Nonlinearity First Order Fit [b], [d] -40 to 125°C ±0.5 ±1 °C INLCDC Nonlinearity Second Order Fit [b], [e] -40 to 125°C ±0.2 ±0.4 °C PSRTEMP Voltage Dependency [b] VSUPPLY > VREG+0.25V 0.03 0.1 °C/V 2.3V ≤ VSUPPLY ≤ VREG + 0.25V 1.25 2.25 PDM Output VPDM_Range Output Range [b] 10 90 %VSUPPLY fPDM PDM Frequency fSYS/8 kHz tSETT Filter Settling Time [b], [f] 0% to 90% LP filter 10k /400nF 9.2 ms VRIPP Ripple [b], [f] 0% to 90% LP filter 10k /400nF 1.0 mV/V |
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