FDPC8014AS datasheet(1/12 Pages) ONSEMI

No de pièce	FDPC8014AS

Description	MOSFET ??Dual, N-Channel, POWERTRENCH, Power Clip, Asymmetric 25 V

PDF	12 Pages

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Fabricant	ONSEMI [ON Semiconductor]

Site Internet	http://www.onsemi.com

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1 / 12 page

December, 2020 − Rev. 2

1

Publication Order Number:

FDPC8014AS/D

MOSFET – Dual, N-Channel,

POWERTRENCH), Power

Clip, Asymmetric

25 V

FDPC8014AS

General Description

This device includes two specialized N−Channel MOSFETs in a

dual package. The switch node has been internally connected to enable

easy placement and routing of synchronous buck converters. The

control MOSFET (Q1) and synchronous SyncFET

t (Q2) have been

designed to provide optimal power efficiency.

Features

• Q1: N−Channel

♦ Max rDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A

♦ Max rDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A

• Q2: N−Channel

♦ Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 40 A

♦ Max rDS(on) = 1.2 mW at VGS = 4.5 V, ID = 37 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Computing

• Communications

• General Purpose Point of Load

PIN DESCRIPTION

Name

Description

1

HSG

High Side Gate

2

GR

Gate Return

3, 4, 9

V+ (HSD)

High Side Drain

5, 6, 7

SW

Switching Node, Low Side Drain

8

LSG

Low Side Gate

10

GND (LSS) Low Side Source

www.onsemi.com

Power Clip 5x6

PDFN8 5x6, 1.27P,

CASE 483AR

See detailed ordering and shipping information on page 10 of

this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

Bottom

Top

N−Channel MOSFET

FDPC8014AS = Specific Device Code

$Y

= ON semiconductor Logo

&Z

= Assembly Plant Code

&3

= 3−Digit Date Code

&K

= 2−Digits Lot Run Traceability Code

PIN1

PAD10

GND(LSS)

PAD9

V+(HSD)

$Y&Z&3&K

FDPC

8014AS

GR

V+

LSG

SW

V+

HSG

LSG

SW

V+

HSG

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