FDPC8014AS datasheet(8/12 Pages) ONSEMI

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FDPC8014AS

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TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)

406080

0.1

100

1000

10000

Crss

Coss

Ciss

0.001

0.01

0.1

100

1000

100

125

128

160

0.1

100

1000

2000

−5

−4

−3

−2

−1

100

1000

10000

100

150

Figure 20. Gate Charge Characteristics

Figure 21. Capacitance vs. Drain to Source Voltage

Figure 22. Unclamped Inductive Switching Capability

Figure 23. Maximum Continuous Drain Current vs.

Case Temperature

Figure 24. Forward Bias Safe Operating Area

Figure 25. Single Pulse Maximum Power Dissipation

Qg, GATE CHARGE (nC)

ID = 40 A

VDD = 13 V

VDD = 10 V

VDD = 15 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

f = 1 MHz

VGS = 0 V

TJ = 125°C

tAV, TIME IN AVALANCHE (ms)

TJ = 25°C

TJ = 100°C

TC, CASE TEMPERATURE (°C)

VGS = 4.5 V

VGS = 10 V

RqJC = 3.3°C/W

t, PULSE WIDTH (s)

CURVE BENT TO

MEASURED DATA

VDS, DRAIN to SOURCE VOLTAGE (V)

SINGLE PULSE

TJ = MAX RATED

RqJC = 3.3°C/W

TC = 25°C

THIS AREA IS LIMITED

BY rDS(on)

10 ms

100 ms

1 ms

10 ms

100 ms/DC

SINGLE PULSE

RqJC = 3.3°C/W

TC = 25°C

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