FDPC8014AS datasheet(4/12 Pages) ONSEMI

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FDPC8014AS

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)

Symbol

Unit

Max

Typ

Min

Type

Test Condition

Parameter

DRAIN−SOURCE DIODE CHARACTERISTICS

VSD

Source to Drain Diode Forward

Voltage

VGS = 0 V, IS = 20 A (Note 6)

VGS = 0 V, IS = 40 A (Note 6)

−

0.8

1.2

Diode Continuous Forward

Current

TC = 25°C

−

159

−

IS,Pulse

Diode Pulse Current

−

266

1116

−

trr

Reverse Recovery Time

Q1: IF = 20 A, di/dt = 100 A/ms

Q2: IF = 40 A, di/dt = 300 A/ms

−

Qrr

Reverse Recovery Charge

−

125

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

6. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted)

0.0

0.2

0.4

0.6

0.8

1.0

VGS = 3.5 V

VGS = 3 V

PULSE DURATION = 80 ms

DUTY CIRCLE = 0.5% MAX

VGS = 2.5 V

VGS = 10 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4.5 V

015

VGS = 3 V

ID, DRAIN CURRENT (A)

VGS= 3.5 V

VGS = 4.5 V

VGS = 2.5 V

VGS= 10 V

−75 −50 −25

100 125

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

ID = 20 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (°C)

TJ = 125°C

ID = 20 A

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure 2. Normalized On−Resistance vs. Drain Current

and Gate Voltage

Figure 3. Normalized On Resistance vs. Junction

Temperature

Figure 4. On−Resistance vs. Gate to Source Voltage

PULSE DURATION = 80 ms

DUTY CIRCLE = 0.5% MAX

PULSE DURATION = 80 ms

DUTY CIRCLE = 0.5% MAX

TJ = 25°C

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