MIC21LV32 datasheet(9/50 Pages) MICROCHIP

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DS20006513A-page 9

MIC21LV32

Stackability APO, NPI, ONR

High-Level Input Voltage for NPI

VIH(NPI)

2.0

—

Current = 0.5 mA

Low-Level Input Voltage for NPI

VIL(NPI)

—

0.8

Current = 0.5 mA

High-Level Output Voltage for APO

VOH(APO)

—

4.7

—

Current = 0.5 mA

Low-Level Output Voltage for APO

VOL(APO)

—

0.25

—

Current = 0.5 mA

High-Level Output for ONR

VOH(ONR)

—

4.5

—

Current = 0.5 mA

Low-Level Output for ONR

VOL(ONR)

—

0.25

—

Current = 0.5 mA

Leakage Current

ILEAK

——

µA

VDD = 5V

ONR Short Current

ISHT(ONR)

—5.8

—

Thermal Shutdown

Thermal Shutdown Threshold

TSD

—160

—

°C

TJ rising

Thermal Shutdown Hysteresis

TSD_HYS

—20

—

°C

Note 2

ELECTRICAL CHARACTERISTICS(1) (CONTINUED)

Electrical Characteristics: VIN = 12V; VOUT = 1.2V; fSW = 500 kHz/phase; VBST – VSW =5V; TA = +25°C, unless noted.

Boldface values indicate -40°C ≤ TJ ≤ +125°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Note 1: Specification for packaged product only.

2: Ensured by design and characterization. Not production tested.

3: Measured in Test mode.

4: The maximum duty cycle is limited by the fixed mandatory off-time of typically 360 ns.

5: Power dissipation at 36V input does not allow the measurement at higher VDD current levels. The bolded

Min. and Max. Characteristics specify 125°C as the maximum junction temperature, not the maximum

ambient temperature. Measurements can be done at a higher current and higher input voltage in a pulsed

way to avoid heating the junction over 125°C.

TEMPERATURE SPECIFICATIONS

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Operating Junction Temperature Range

-40

—

+125

°C

Note 1

Maximum Junction Temperature

TJ(ABSMAX)

—

+150

°C

Storage Temperature

-65

—

+150

°C

Lead Temperature

TLEAD

—

+300

°C

Soldering, 10s

Package Thermal Resistance

Thermal Resistance, 5 mm x 5 mm,

32-Lead VQFN

JC

—

°C/W

Junction to case

Thermal Resistance, 5 mm x 5 mm,

32-Lead VQFN

JA

—

°C/W

Junction to ambient

Note 1:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the

maximum allowable power dissipation will cause the device operating junction temperature to exceed the

maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.

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