UT4812G-S08-R datasheet(1/5 Pages) DOINGTER

No de pièce	UT4812G-S08-R

Description	Dual N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

Scroll/Zoom	100%

Fabricant	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Site Internet	http://www.doingter.cn/

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Description：

This Dual N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=7A,RDS(ON)<25mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current

7

A

Continuous Drain Current-TC=100℃

4.95

IDM

Pulsed Drain Current

40

PD

Power Dissipation

4

2

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJA

Thermal Resistance,Junction to Ambient

2

85

S1

G2

S1

G1

D1

D2

D1

℃

/W

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