UT4812G-S08-R datasheet(3/5 Pages) DOINGTER

No de pièce	UT4812G-S08-R

Description	Dual N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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Fabricant	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Maximum Body-Diode Continuous Current

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Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

Repetitive Rating: Pulse width limited by maximum junction temperature.

The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in

any given application depends on the user's specific board design.Surface Mounted on FR4 Board, t ≤ 10 sec. The current rating is based on the t ≤ 10s

thermal resistance rating.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production.

Figure 1 Output Characteristics

Figure 2 Transfer Characteristics

ID- Drain Current (A)

Figure 3 Rdson- Drain Current

TJ-Junction Temperature(℃)

Figure 4 Rdson-JunctionTemperature

UT4812G-S08-R

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