RB715F datasheet(1/4 Pages) ROHM

No de pièce	RB715F

Description	Schottky barrier diode

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Fabricant	ROHM [Rohm]

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RB715F

Diodes

Rev.B

1/3

Shottky barrier diode

RB715F

Application

External dimensions (Unit : mm)

Lead size figure (Unit : mm)

Low current rectification

Features

1) Small mold type. (UMD3)

2) Low VF

3) High reliability.

Construction

Structure

JEITA : SC-70

JEDEC : SOT-323

dot (year week factory)

ROHM : UMD3

2.0±0.2

0.3±0.1

各リードとも

同寸法

(3)

1.3±0.1

（0.65）

(2)

(1)

0.15±0.05

0.9±0.1

0.7±0.1

0～0.1

Each lead has same dimension

UMD3

0.8MIN.

0.65

1.3

Silicon epitaxial planer

Taping dimensions (Unit : mm)

4.0±0.1

2.0±0.05

φ1.55±0.05

φ0.5±0.05

2.25±0.1

　　　　 0

1.25±0.1

0.3±0.1

Absolute maximum ratings (Ta=25

°C)

Symbol

Unit

VRM

V

VR

V

Io

mA

IFSM

mA

Tj

℃

Tstg

℃

Electrical characteristics (Ta=25

°C)

Storage temperature

-40 to +125

*1)Rating of per diode

ward current surge peak (60Hz

・1cyc) (*1)

200

ion temperature

125

everse voltage (DC)

40

verage rectified forward current

30

Parameter

Limits

everse voltage (repetitive peak)

40

R

A

For

Junct

(

Symbol

Min.

Typ.

Max.

Unit

VF

--

0.37

V

IF=1mA

IR

--

1

µA

VR=10V

Ct

-

2.0

-

pF

VR=1V f=1MHz

Conditions

Capacitance between terminals

ent

Parameter

orward voltage

F

Reverse curr

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