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AS4LC2M8S1 Fiches technique(PDF) 14 Page - Alliance Semiconductor Corporation

No de pièce AS4LC2M8S1
Description  3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
PDF  28 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  ALSC [Alliance Semiconductor Corporation]
Site Internet  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC2M8S1 Fiches technique(HTML) 14 Page - Alliance Semiconductor Corporation

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ALLIANCE SEMICONDUCTOR
7/5/00
AS4LC2M8S1
AS4LC1M16S1
Write—full-page burst
* A8 and A9 = Don’t care.
DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte.
ƒPage left open; no t
RP.
Read—full-page burst*
* For this example, the CAS latency = 2.
A8 and A9 = “Don’t care.”
ƒ DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte.
** Page left open; no t
RP.
A0–A9
A10
BA
tAH
tAS
ROW
tAH
tAS
ROW
tAH
tAS
BANK
(A0-A7)*
BANK
CLK
CKE
COMMAND
DQM†
T0
T1
T4
T2
Tn+1
tCH
tCK
*†ƒ
tCKS tCKH
tCMH
tCMS
NOP
NOP
NOP
T3
T5
DQ
tCL
tCMS
tCMH
ACTIVE
Column m
tRCD
Tn+2
DIN m
DINm+1
DIN m+3
tDS
tDH
tDS
tDS
Tn+3
WRITE
NOP
NOP
BURST TERM
NOP
DIN m+2
tDS tDH
tDS tDH
tDH
tDS
DIN m+255
tDH
tDH
Full page completed
Full-page burst does not
self terminate. Can use
BURST TERMINATE command.
ƒ
256 locations within same row
CLK
T0
T1
T2
T3
T4
T5
T6
Tn+1
Tn+2
Tn+3
Tn+4
tCL
tCH
tCK
CKE
tCMS tCMH
Command
ACTIVE
NOP
NOP
BURST
TERM
NOP
NOP
NOP
NOP
NOP
READ
NOP
DQM†
tCMS tCMH
A0–A9
A10
tAH
tAS
tAH
tAS
ROW
COLUMN m
(A0-A7)
ROW
BA
tAH
tAS
BANK
BANK
DQ
tRCD
DOUT m
Full page completed
tAC
*†ƒ
tLZ
tOH
tAC
*†ƒ
DOUT m+1
tOH
tAC
*†ƒ
tOH
tAC
*†ƒ
DOUT m+2
DOUT m+255
tOH
tAC
*†ƒ
DOUT m
tOH
tAC
*†ƒ
DOUT m+1
tOH
CAS Latency
256 locations within same row
tHZ
*†ƒ
Full-page burst does not self-terminate.
Can use BURST TERMINATE command.
**



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