WSE3099 datasheet(1/5 Pages) WIINSOK

No de pièce	WSE3099

Description	P-Ch MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricant	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

Site Internet	http://www.winsok.tw/index.html

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1 / 5 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Sou

rce Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, -VGS @ -10V

1

-

5.0

A

ID@TC=100℃

Continuous Drain Current, -VGS @ -10V

1

-

4.0

A

IDM

Pulsed Drain Current

2

-

20

A

EAS

Single Pulse Avalanche Energy

3

18

mJ

IAS

Avalanche Current

8

A

PD@TC=25℃

Total Power Dissipation

4

1.8

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient

1

---

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case

1

---

30

℃

/W

BVDSS

RDSON

ID

-30V

53mΩ

-

5.0A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

SOT

-89 Pin Configuration

Product Summery

The WSP3099 is the highest performance trench

P-Ch MOSFET with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the synchronous buck converter

applications .

The WSP3099 meet the RoHS and Green Product

requirement with full function reliability approved.

WSE3099

P-Ch MOSFET

Page 1

www.winsok.tw

Dec.2014

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