MB96F348CWCPMC-GSE2 datasheet(96/109 Pages) CYPRESS

96 / 109 page

MB96340 Series

Document Number: 002-04579 Rev. *A

Page 96 of 109

14.8

Flash Memory Program/erase Characteristics

[1]: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high

temperature measurements into normalized value at 85oC)

(TA = -40°C to 105°C, VCC = AVCC = 3.0V to 5.5V, VSS = AVSS = 0V)

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

Program/Data Flash (Main Flash)

0.9

3.6

Without erasure pre-programming time

Sector erase time Data Flash

0.5

Without erasure pre-programming time

0.8

3.6

Including erasure pre-programming time

Chip erase time Program/Data Flash (Main Flash)

n*0.9

n*3.6

Without erasure pre-programming time

(n is the number of Flash sector of the

device)

Chip erase time Data Flash

2.5

Without erasure pre-programming time

3.7

16.4

Including erasure pre-programming time

Word (16-bit width) programming time

Program/Data Flash (Main Flash)

370

Without overhead time for submitting

write command

Byte (8-bit width) programming time Data Flash

100

Without overhead time for submitting

write command

Program/Erase cycle

10000

cycle

100 000 Program/Erase cycles are under

evaluation by Cypress

Flash data retention time

year

[1]

MB96F348CWCPMC-GSE2 Fiches technique(PDF) 96 Page - Cypress Semiconductor

MB96F348CWCPMC-GSE2 Fiches technique(HTML) 96 Page - Cypress Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Fiches technique Télécharger

Lien URL