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No de pièce	PTF080451

Description	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Taille du fichier	158.52 Kbytes

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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Numéro de pièce similaire - PTF080451

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	PTF080101	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18
	PTF080101S	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101S	172Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz 2004-10-05
	PTF080601	293Kb / 6P	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz 2003-12-05

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	PTF080601	293Kb / 6P	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz 2003-12-05
	PTF080901	205Kb / 10P	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz 2004-04-05
	PTF210451	406Kb / 8P	LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz 2003-12-22
Tyco Electronics	MAPLST0810-030CF	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
	MAPLST0810-030CF-05-2004	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF-05-2004	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
Infineon Technologies A...	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18