SCTW60N120G2AG pdf, SCTW60N120G2AG Description, SCTW60N120G2AG Fiches technique, SCTW60N120G2AG view ::: ALLDATASHEET :::

No de pièce	SCTW60N120G2AG

Description	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package

Taille du fichier	197.08 Kbytes

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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Numéro de pièce similaire - SCTW60N120G2AG

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	SCTW60N120G2	201Kb / 12P	Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package 14-Jun-2021

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	SCTH35N65G2V-7AG	620Kb / 15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 24-Jan-2020
	SCTW100N65G2AG	423Kb / 11P	Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package 21-Nov-2018
	SCTW100N120G2AG	217Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package 23-Jul-2020
	SCTW35N65G2VAG	206Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package 09-Sep-2020
	SCTWA35N65G2VAG	243Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package 11-Aug-2020
	SCTWA60N120G2AG	242Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package 16-Dec-2020
	SCT10N120AG	238Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package 21-Sep-2022
	SCTH100N120G2-AG	439Kb / 14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 23-Jul-2020