SCTH35N65G2V-7AG pdf, SCTH35N65G2V-7AG Description, SCTH35N65G2V-7AG Fiches technique, SCTH35N65G2V-7AG view ::: ALLDATASHEET :::

No de pièce	SCTH35N65G2V-7AG

Description	Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Taille du fichier	620.95 Kbytes

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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Numéro de pièce similaire - SCTH35N65G2V-7AG

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	SCTH35N65G2V-7	378Kb / 15P	Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package 17-Dec-2020

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	SCTH35N65G2V-7	378Kb / 15P	Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package 17-Dec-2020
	SCTH100N65G2-7AG	623Kb / 15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 27-Nov-2018
	SCTW100N65G2AG	423Kb / 11P	Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package 21-Nov-2018
	SCTW35N65G2VAG	206Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package 09-Sep-2020
	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCTWA35N65G2VAG	243Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package 11-Aug-2020
	SCT018H65G3AG	390Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package 07-Oct-2022
	SCTH100N120G2-AG	439Kb / 14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 23-Jul-2020