| Fabricant | No de pièce | Fiches technique | Description |
 STMicroelectronics |
SCT040H65G3SAG
|
227Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package
14-Feb-2022 |
|
SCTH35N65G2V-7AG
|
620Kb / 15P |
Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
24-Jan-2020 |
|
SCTW35N65G2VAG
|
206Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020 |
|
SCTWA35N65G2VAG
|
243Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
11-Aug-2020 |
|
SCT018H65G3AG
|
390Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
07-Oct-2022 |
|
SCT025H120G3AG
|
369Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
28-Nov-2022 |
|
SCT040H65G3AG
|
389Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
21-Jan-2022 |
|
SCTH100N120G2-AG
|
439Kb / 14P |
Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
23-Jul-2020 |
|
SCTH60N120G2-7AG
|
356Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
02-Aug-2021 |