# WSE3099 P-Ch MOSFET

## General Information
️· Type: P-Channel MOSFET
️· Description: High-performance trench MOSFET with high cell density for synchronous buck converter applications.
️· Compliance: RoHS and Green Product compliant.

## Electrical Characteristics
️· VDS (Drain-Source Voltage): -30V
️· VGS (Gate-Source Voltage): ±20V
️· ID (Continuous Drain Current): -5.0A @ TC=25°C, -4.0A @ TC=100°C
️· IDM (Pulsed Drain Current): -20A
️· RDS(ON) (Static Drain-Source On-Resistance): 53mΩ @ VGS=-10V, ID=-5.0A
️· VGS(th) (Gate Threshold Voltage): -1.5V (Typ.)
️· EAS (Single Pulse Avalanche Energy): 18mJ
️· IAS (Avalanche Current): 8A

## Thermal Characteristics
️· PD (Total Power Dissipation): 1.8W @ TC=25°C
️· TSTG (Storage Temperature Range): -55 to 150°C

️· TJ (Operating Junction Temperature Range): -55 to 150°C
️· RθJA (Thermal Resistance Junction-Ambient): 62.5°C/W (Max)
️· RθJC (Thermal Resistance Junction-Case): 30°C/W (Max)

## Applications
️· High Frequency Point-of-Load Synchronous Buck Converter (MB/NB/UMPC/VGA)
️· Networking DC-DC Power System
️· Load Switch

## Important Notes
️· Data based on measurements taken on a 1" FR-4 board with 2oz copper.
️· Pulsed tests use a pulse width of ≤ 300us and duty cycle of ≤ 2%.
️· Power dissipation is limited by a 150°C junction temperature.