2SC1941 Fiches technique, PDF

Fabricant	No de pièce	Fiches technique	Description
NEC	2SC1940	169Kb/3P	NPN SILICON TRANSISTOR
New Jersey Semi-Conduct...	2SC1940	305Kb/2P	NPN SILICON TRANSISTOR
New Jersey Semi-Conduct...	2SC1940	123Kb/2P	The 2SC1940 is designed for use in driver stages of audio frequency amplifiers
Hitachi Semiconductor	2SC1942	39Kb/1P	HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT
Savantic, Inc.	2SC1942	107Kb/3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC1942	149Kb/3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC1942	128Kb/3P	Silicon NPN Power Transistors
Savantic, Inc.	2SC1942	109Kb/3P	Silicon NPN Power Transistors
New Jersey Semi-Conduct...	2SC1942	121Kb/2P	Silicon NPN Power Transistor
Quanzhou Jinmei Electro...	2SC1942	149Kb/3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC1942_2014	149Kb/3P	Silicon NPN Power Transistors
Mitsubishi Electric Sem...	2SC1944	54Kb/1P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
Mitsubishi Electric Sem...	2SC1945	132Kb/3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?
eleflow technologies co...	2SC1945	332Kb/4P	10 to 14 watts output power class AB amplifiers applications in HF band.
Mitsubishi Electric Sem...	2SC1946	130Kb/3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?
New Jersey Semi-Conduct...	2SC1946	240Kb/2P	NPN EPITAXIAL PLANAR TYPE
eleflow technologies co...	2SC1946	268Kb/3P	25 watts output power ampilflers applications in VHF band.
Mitsubishi Electric Sem...	2SC1946A	135Kb/3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?
Advanced Semiconductor	2SC1946A	35Kb/1P	NPN SILICON RF POWER TRANSISTOR REV. B
New Jersey Semi-Conduct...	2SC1946A	252Kb/2P	NPN EPITAXIAL PLANAR TYPE

2SC1941 Fiches technique, PDF

2SC1941 Datasheet ,PDF

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