2SC1946 Fiches technique(PDF) - Mitsubishi Electric Semiconductor

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2SC1946 Fiches technique (PDF) - Mitsubishi Electric Semiconductor

2SC1946 Datasheet PDF - Mitsubishi Electric Semiconductor


No de pièce	2SC1946

Télécharger	2SC1946 Télécharger

Taille du fichier	130.5 Kbytes

Page	3 Pages

Fabricant	MITSUBISHI [Mitsubishi Electric Semiconductor]

Site Internet	http://www.mitsubishichips.com

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Description

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

2SC1946 Datasheet (PDF)

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Télécharger Fiches technique

2SC1946 Datasheet PDF - Mitsubishi Electric Semiconductor


No de pièce	2SC1946

Télécharger	2SC1946 Click to download

Taille du fichier	130.5 Kbytes

Page	3 Pages

Fabricant	MITSUBISHI [Mitsubishi Electric Semiconductor]

Site Internet	http://www.mitsubishichips.com

Logo

Description	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

2SC1946 Fiches technique (HTML) - Mitsubishi Electric Semiconductor

2SC1946 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor

2SC1946 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor

2SC1946 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor

2SC1946 Détails du produit

DESCRIPTION
2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications.

APPLICATION
25 watts output power amplifiers applications in VHF band.

Numéro de pièce similaire - 2SC1946

Fabricant	No de pièce	Fiches technique	Description
New Jersey Semi-Conduct...	2SC1946	240Kb / 2P	NPN EPITAXIAL PLANAR TYPE
eleflow technologies co...	2SC1946	268Kb / 3P	25 watts output power ampilflers applications in VHF band.
Mitsubishi Electric Sem...	2SC1946A	135Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?
Advanced Semiconductor	2SC1946A	35Kb / 1P	NPN SILICON RF POWER TRANSISTOR
New Jersey Semi-Conduct...	2SC1946A	252Kb / 2P	NPN EPITAXIAL PLANAR TYPE

Description similaire - 2SC1946

Fabricant	No de pièce	Fiches technique	Description
Mitsubishi Electric Sem...	2SC2053	123Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)
	2SC1946A	135Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?
	2SC1971	127Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
	2SC1972	130Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
	2SC2094	149Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band Mobile radio applications)
	2SC1947	126Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?
	2SC1944	54Kb / 1P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
	2SC1945	132Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?
	2SC1969	145Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
New Jersey Semi-Conduct...	2SC1971	153Kb / 1P	silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio

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